Model for infrared reflectivity reveals the effect of Ge amount on the interface state and the crystalline quality of the 3C-SiC/Ge/Si heterostructure - Université de technologie de Troyes Access content directly
Conference Papers Year : 2010

Model for infrared reflectivity reveals the effect of Ge amount on the interface state and the crystalline quality of the 3C-SiC/Ge/Si heterostructure

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hal-02526131 , version 1 (31-03-2020)

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  • HAL Id : hal-02526131 , version 1

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Michel Kazan, Aurélien Bruyant, Pascal Royer, Laurent Arnaud, Christophe Couteau, et al.. Model for infrared reflectivity reveals the effect of Ge amount on the interface state and the crystalline quality of the 3C-SiC/Ge/Si heterostructure. European Material Research Society 2010, Jun 2010, Strasbourg, France. ⟨hal-02526131⟩

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