The invention relates to a method for manufacturing a thin film of ordered silicon nanopatterns including the steps of: A) preparing a self-organised reactive nanomask (RNM) consisting of MxM'yOz, referred to as an initial RNM, using an inorganic nanomask INP; B) the liquid deposition of said initial RNM onto a silicon substrate; C) transferring said nanomask MxM'yOz to the silicon substrate by dry etching, by exposing said nanomask MxM'yOz to a fluorinated plasma gas for 0.5 to 4 minutes according to the constitution of said gas, transforming the MxM'yOz into a stable MF2 component referred to as an intermediate nanomask, which enables either a nanoperforated thin film or an ordered lattice of silicon nanowires to be obtained, which have dimensions and a period linked to those of the initial RNM. The invention relates to nanoperforated thin films obtained by the method above, as well as to the use of ordered silicon nanowires for optical and photonic purposes.