%0 Journal Article %T UV‐generated hot electrons in Au‐ZnO as robust way for plasmon‐enhanced photoluminescence and photocatalysis reactions in metal‐semiconductor nanomaterials %+ Laboratoire de Chimie et Physique - Approche Multi-échelle des Milieux Complexes (LCP-A2MC) %+ Lumière, nanomatériaux et nanotechnologies (L2n) %A Shahine, Issraa %A Jradi, Safi %A Beydoun, Nour %A Gaumet, Jean-Jacques %A Akil, Suzanna %< avec comité de lecture %J ChemPhotoChem %I Wiley %V 4 %N 3 %P 181-194 %8 2020 %D 2020 %R 10.1002/cptc.201900252 %K nanomaterials %K photocatalysis %K plasmonic photocatalysis %K plasmon generation %K photoluminescence %K semiconductors %Z Engineering Sciences [physics]/Optics / PhotonicJournal articles %X Here, we introduce a mechanistic study to design the hybrid junction in metallic‐semiconductor (M/SC) nanostructures. UV light induced hot electrons generation in ZnO nanostructures is precisely tuned the photoluminescence (PL) and photocatalytic (PC) properties in hybrid Au/ZnO nanomaterials. Both, enhancement and quenching of the PL and PC functionalities are obtained, depending on the Au nanoparticles (AuNPs) characteristics and Au/ZnO molecular distance. Basically, under UV irradiation free‐ligand AuNPs quench the luminescence of ZnONPs through direct charge transfer (CT) from ZnO into AuNPs. Whereas, capped AuNPs enhance the ZnO emission through the indirect CT from AuNPs into ZnO ones facilitated by the distance created by the CTAB ligand between both constituents of the hybrid systems. An optimal Au/ZnO molecular distance is suitable to enhance both the plasmonic photocatalysis reaction and photoelectric properties of M/SC nanostructures. This phenomena is mediated by the energy transfer (ET) from ZnONPs into AuNPs. The resulting PL enhancement is described by the plasmon induced resonance energy transfer effect (PIRET effect). %G English %L hal-02380338 %U https://utt.hal.science/hal-02380338 %~ CNRS %~ UNIV-TROYES %~ UNIV-LORRAINE %~ LCPA2MC-UL %~ UTT