Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides - Université de technologie de Troyes Access content directly
Conference Papers Year : 2012

Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides

Abstract

Plasmonics implementation in optical circuits and interconnects requires interfacing with dielectric optical waveguides. We show here metallic nanoparticles chain mode excitation from SOI waveguide with a record distance lower than 600 nm at telecom wavelength.
No file

Dates and versions

hal-02360186 , version 1 (12-11-2019)

Identifiers

  • HAL Id : hal-02360186 , version 1

Cite

Mickaël Février, Philippe Gogol, Abdelhanin Aassime, Robert Megy, Alexandre Bondi, et al.. Highly efficient interfacing of silicon-on-insulator and localized surface plasmon waveguides. OFC/NFOEC, Mar 2012, Los Angeles, United States. ⟨hal-02360186⟩
30 View
0 Download

Share

Gmail Facebook X LinkedIn More