Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric - Equipe Matériaux du GeePs
Communication Dans Un Congrès Année : 2024

Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric

Résumé

Silicon Carbide (SiC) devices are a technology used for power electronics and especially for automotive applications. For MOSFET devices, an aging of the Gate oxide with dynamical HTGB stress called GSS on a commercial device permits a better understanding of the failure mechanism occurring on the device during use. Electrical static characterization Ids-Vds and Ids-Vgs, Raman spectroscopy, Atomic Force Microscope associated with a "resiscope" and Transmission Electronic Microscopy analyses are used to determine the composition of the oxide design and the origin of the failure mechanism. An electrical modification related to a nanometer scale material variation with platelet apparition is detected through the oxidation.
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Dates et versions

hal-04744749 , version 1 (21-10-2024)

Identifiants

  • HAL Id : hal-04744749 , version 1

Citer

Tanguy Phulpin, Alexandre Jaffré, Pascal Chrétien. Aging impact of the 4H-SiC MOSFET SiO$_2$ gate dielectric. ESREF 2024 - 35th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2024, Parme, Italy. ⟨hal-04744749⟩
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